Dr Rob Willekers
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Nondestructive subsurface nano-imaging is of tremendous importance due to the growing complexity of manufacturing nanotransistors, displays and solar cells. For example, today's 3D transistors such as FinFET, gate-all-around silicon nanowire FET, 3D NAND memory and future quantum electronics have nanostructures which are deeply buried beneath other nanostructured layers. The ability to manufacture, measure and align these structures on top of each other directly impacts chip's performance and yield. In this technology platforms we develop concepts and solutions to be able to:
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