Our work

E450LMDAP: Development for Advanced Patterning

The ENIAC JU project E450LMDAP (European 450mm Lithography and Metrology Development for Advanced Patterning) is aimed at developing 300 mm lithography and 300/450 mm metrology modules and tools. It will initiate distributed pilot line activities and make a start with early 10nm node advanced patterning process development at the IMEC pilot line.

The pilot line activities in E450LMDAP will build on an earlier ENIAC JU project called E450EDL. In addition, lithography, metrology and deposition equipment performance suited for 10nm node will be demonstrated in the IMEC pilot line, interconnected with holistic methodologies. The project will extend the engagement of the European semiconductor equipment industry in the 450 mm wafer size transition and 300mm 10nm development that started with the EEMI450 initiative and proceeded with subsequent projects funded with public money. The consortium comprises 38 members from 6 different European countries with SMEs and research institutes and also IDMs as end users.

Lithography and Metrology Development for Advanced Patterning

The technical work is organized in three work packages. The main objective in the work package on lithography is to develop and to have prototyping activities comprising amongst others wafer stage, wafer handler, optics, electronic as well as preliminary tool system qualification. In the dedicated work package on metrology, tool prototypes will be developed for wafer and mask platforms and metrology data will be integrated holistically for advanced lithography data management and fab control. The key objective of the work package on advanced patterning is to demonstrate/qualify selected N10 patterning modules to meet the required specifications. Two patterning approaches will be compared in terms of achieved performance: 193nm immersion multiple patterning and single exposure EUV lithography patterning.

The role of TNO

TNO provides technology to the E450LMDAP project to support the industrial partners in the consortium. Topics include control of contamination and thermal behavior in lithography tools and modules, and the development of sensors and metrology modules. More specifically, TNO will work with consortium partners ASML, VDL-ETG and ASYS to reduce contamination in the wafer handler. TNO’s additive manufacturing know-how will be used to develop an improved immersion hood, together with AAE and ASML. A prototype surface condition monitoring sensor (SCMS) will be built and implemented in a new facility at TNO for lifetime testing of EUV optics and reticles. A dedicated Atomic Force Microscope (AFM) will be developed for mask profilometry. Finally, TNO will study the feasibility of applying darkfield microscopy (Rapid Nano) combined with AFM for defect classification. The E450LMDAP project enables TNO to drive the further development of information and communication technology and boost the competitiveness of Dutch and European industry.

Our work

Lithography with extreme ultraviolet light (EUV)

Our computers are getting ever faster and the possibilities that chips offer are becoming greater, so chip production machines have to become increasingly more advanced. A lithography machine, comparable... Read more


Dr. ir. Olaf Kievit

  • Semiconductor equipment
  • Contamination control
  • Lithography
  • Metrology
  • Horizon 2020

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