Since 2000 TNO has been active in EUV material interaction research, developing the 2nd generation EUV exposure and in-situ surface analysis facility – dubbed EBL2 – to accommodate the ASML power roadmap. This system will give customers the opportunity to evaluate their materials/components in terms of NXE-relevant EUV irradiation and environmental conditions in order to address contamination and lifetime challenges.

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TNO's International Centre for Contamination Control (ICCC) is dedicated to developing the highest standards and practices in contamination control to eliminate both particle and molecular contamination. The centre is equipped with the most advanced facilities, including ultra-clean handling equipment for EUV masks, inspection and analysis tools for both particle and molecular contamination, as well as various other inspection and cleaning equipment. We apply our 15 years of knowledge and experience in the field to develop the newest, most innovative and reliable solutions possible. TNO is industry leader when it comes to contamination control methods in both current immersion tools and the latest innovations in EUV Lithography.

EBL2: EUV exposure and analysis facility

The main ICCC facility for EUV development is the EUV Beam Line 2 (EBL2), shown below. This compound system consists of a beam line for EUV exposure testing in a controlled environment, and an XPS for surface analysis. Samples can be transferred between beam line and XPS without any disruption to the vacuum.

EBL2 in its cleanroom

The table below summarises key performance parameters of EBL2. The system can accept a wide range of sample sizes, including standard EUV reticles with or without pellicles.

Power  >1 W in 2% BW @ 13.5 nm (“IB”) (10 W in OoB ((10-20 nm )) @ 3 kHz
Power density 
>1 W/mm2 IB in focus @3 kHz
Spot size 
1 – 30 mm diameter (adjustable power density)
Rep rate 
1 Hz – 10 kHz (standard 3 kHz)
Sample size 
Max 152x152x20 mm (EUV mask + pellicle possible)
Dose control 
<20 % in free running experiment
Uninterrupted exposure time 
>100 hours
In vacuum analysis imaging Ellipsometry and XPS

The EBL2 shown below contains a Beam Line in which samples can be exposed to EUV radiation in a controlled, representative environment for extended periods, to address lifetime questions. An in-situ imaging ellipsometer is available for realtime monitoring of the exposure progress.

EBL2 also contains an XPS system capable of analysing EUV masks and pellicles, and with defect mapping functionality. The automated sample handling infrastructure accepts SEMI standard dual pods, and maintains NXE compatibility for backside particle contamination. The system is therefore suited to illuminate samples up to a high dose of EUV and subsequently ship reticles back to a fab for printing and inspection at wafer level.


Wilbert Staring MBA MSc

  • Semiconductor Equipment
  • EUV
  • Mask Infrastructure
  • EUV
  • EUV Pellicle